Alter UK leads innovation in RF semiconductors
THRUST: New European commitment to thermal innovation in semiconductors
The European Space Agency (ESA) has awarded us a new contract to lead the THRUST - Thermal Heat Reduction Techniques for Semiconductor Technology project, focused on the development of revolutionary thermally efficient RF power transistors. This initiative is part of the Component Sovereignty for Europe programme, which aims to strengthen critical space supply chains within member countries.
Cooler transistors, more efficient space THRUST will use GaN-on-diamond technology to double the thermal performance of space RF amplifiers. Alter UK is leading the consortium, backed by institutions including Bristol and Cardiff universities, and companies such as Empyreal Networks and Airbus, which has already helped define the demonstrator specifications.
With an initial duration of 30 months, this phase paves the way for a high-power demonstrator, with potential space and terrestrial applications. The future of efficient RF electronics has begun.