Heavy Ions tolerant SiC diodes

HISiC (Heavy Ions tolerant SiC diodes configurations) project proposal has been accepted by RADNEXT Transnational Access reviewers with H2020 funding.

SiC weakness under heavy ions radiation is not a secret. The radiation improved SiC multi-die configuration modules will be tested in this project, demonstrating SOAs (Safe Operating Area) up to voltages requested by industry.

This will continue the many heavy ions tests onto SiC power devices performed by Alter Technology over the years that allowed SiC diodes to fly in BepiColombo, Solar Orbiter and very soon in JUICE.

RADNEXT is an H2020 INFRAIA-02-2020 infrastructure project with the objective of creating a network of facilities and related irradiation methodology for responding to the emerging needs of electronics component and system irradiation; as well as combining different irradiation and simulation techniques for optimizing the radiation hardness assurance for systems, focusing on the related risk assessment.