A European R&D project aiming to develop the next generation low-C-SWAP lasercom modems enabling >50 Gb/s satellite constellation interconnectivity
The European project ORIONAS (Lasercom-on-chip for next generation, high-speed satellite constellation interconnectivity) was launched on 1st November 2018 with the kick-off meeting held in Toulouse, France on 19th November 2018. The duration of the project is 3 years.
ORIONAS is focusing on the development of electronic-photonic integrated circuits (ePICs) for next generation, high speed inter-satellite laser communications.
ORIONAS aims to disrupt the way lasercom modems are designed, built and qualified in order to enable low C-SWAP satellite constellation lasercom links. ORIONAS will squeeze the current bulk lasercom modems into monolithic InP and BICMOS ePICs using cost-effective multi-project wafer run (MPW) fabrication within European foundries. ORIONAS will package the ePICs using hi-rel module assembly processes and will develop a 50 Gb/s laser-mini-modem suitable for a new-gen low c-swap lasercom terminals.
ORIONAS brings together leading European innovators from industry and academia for achieving its challenging technology objectives that require expertise spanning from III-V integration, silicon photonics, high speed electronic IC design, optoelectronic assembly/integration and photonic packaging. System applicability and specifications are driven by Thales Alenia Space - a leading European satellite manufacturer.
| Project Team | |
|---|---|
| LEO Space Photonics R&D | Greece |
| Leibniz-Institut für innovative Mikroelektronik | Germany |
| Thales Alenia Space | France |
| Gooch & Housego (Torquay) Ltd | UK |
| III-V LAB | France |
| LUSOSPACE | Portugal |
| Thales Alenia Space | Switzerland |
| Consorzio Nazionale Interuniversitario per le Telecomunicazioni | Italy |
| Alter Technology | UK |
H2020-SPACE Research Executive Agency Research & Innovation Project
ORIONAS Objectives
- Fabrication of SiPhmodulator and receiver circuits monolithically integrated with SiGeBiCMOS electronics for direct and coherent detection modulation formats. Fabrication within European semiconductor foundry.
- Assembly, integration and packaging of DPSK and coherent lasercom transceiver modules delivering up to 50 Gb/s aggregate bit rate.
- >1W High-power Semiconductor Optical Amplifier (HP-SOA) integrated circuitsthrough monolithic integration in InP within a European III-V foundry. >10x times more powerful than current commercial SOAs.
- Assembly, integration and packaging of HP-SOA demonstrating 2 orders of magnitudesmaller footprint than conventional fiber amplifiers.
- Fabrication of credit card size, radiation resistant low noise optical pre-amplifier using low-cost COTSErbium doped fibers.
- Bread-board assembly and demonstration of DPSK and coherent QPSK transmission using integrated devices through system trials conducted by Thales Alenia Space.