GaNRET+

GaNRET+ is the continuation of the GaNRET project, carried out with IRT Saint-Exupéry, the Institute of Research and Technology based in Toulouse. This follow-on program maintains the collaborative dynamic already established around GaN technologies while refocusing the scope and budget to align with the updated consortium perimeter. More broadly, it is part of a long-standing collaboration between Alter Technology France and IRT Saint-Exupéry on wide-bandgap semiconductor reliability and integration. Over the years, Alter has made significant contributions alongside IRT to several strategic projects, including SiCRET (SiC Reliability for Transportation), SiCRET+ (SiC module), GaNRET (GaN reliability for transportation), and FIGANE (advanced packaging with GaN FET dies embedded in a PCB). In this continuity, GaNRET+ extends the roadmap toward new generations of GaN-based power solutions, including GaN modules, System-in-Package approaches, and monolithic GaN IC technologies. The project was scaled down from €5.5M to €3M, with fewer partners, but it preserves the core technical ambition and the strategic relationship established through the initial GaNRET framework.

The project now runs over 42 months instead of 48, with a sharper prioritization of activities across the work packages. WP1 remains unchanged, WP2 is now mainly centered on DHTOL and SALT core services provided by Alter FR, and WP3 is focused primarily on SoC performance and reliability as well as core services of Alter FR, while other tasks have become optional. The technical objectives are already well advanced, and the program has received a positive principle agreement.

For us, GaNRET+ represents €360k of revenue over 42 months, but its value goes beyond direct turnover. Part of the work performed within the project can also be declared under the CIR (Crédit d’Impôt Recherche), creating additional financial leverage by supporting R&D tax optimization and helping reduce the company’s tax burden. In that sense, GaNRET+ is both a business opportunity and a structured R&D vehicle, strengthening our long-term positioning in GaN reliability, advanced semiconductor evaluation, and innovative packaging and integration approaches for power electronics.